Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=12/a=121201/pdf
Reference22 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
3. Operation of a 2500V 150A Si-IGBT / SiC Diode Module
4. High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
5. Time Resolved Spectroscopy of Defects in SiC
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1. Investigation of carrier lifetime behavior in the 4H-SiC homoepitaxial layer;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
2. Surface defects in 4H-SiC: properties, characterizations and passivation schemes;Semiconductor Science and Technology;2023-06-08
3. Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions;Applied Physics Letters;2023-03-13
4. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers;APL Materials;2023-03-01
5. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation;Scientific Reports;2022-08-15
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