High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal–Oxide–Semiconductor Inverters Realized by Controlling Interface Charges-Reference-Cited by-同舟云学术

High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal–Oxide–Semiconductor Inverters Realized by Controlling Interface Charges

Published:2010-10-01 Issue:10 Volume:3 Page:105102
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Moriyama Naoki,Ohno Yutaka,Suzuki Kosuke,Kishimoto Shigeru,Mizutani Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/3/i=10/a=105102/pdf

Reference18 articles.

1. Carbon Nanotube Inter- and Intramolecular Logic Gates

2. An Integrated Logic Circuit Assembled on a Single Carbon Nanotube

3. 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

4. Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistors

5. Random networks of carbon nanotubes as an electronic material

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