Low-voltage carbon nanotube complementary electronics using chemical doping to tune the threshold voltage

Abstract

Abstract Simultaneous controlling of the threshold voltage of both p- and n-type transistors, comprising complementary integrated circuits, is required to develop low-voltage and low-power flexible electronics. In this study, we report tuning the threshold voltage of carbon nanotube thin-film transistors with organic and metal-ion complex salts as dopants, and using device passivation to secure air-stability. Chemical doping affords simple yet precise control of the dopant level and enables the threshold voltages to be finely tuned. Complementary inverters were fabricated on a plastic substrate. Operation at a low supply voltage of 0.5 V was achieved with fairly high gain and noise margins.