Electron Transport in Oxygenated Amorphous Hydrogenated Silicon Prepared by Reactive Sputtering-Reference-Cited by-同舟云学术

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Electron Transport in Oxygenated Amorphous Hydrogenated Silicon Prepared by Reactive Sputtering

Published:1987-04-20 Issue:Part 1, No. 4 Volume:26 Page:517-523
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jiranapakul Koarakot,Shirafuji Junji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trends in Heavy Fermion Matter;Journal of Physics: Conference Series;2011-01-01

2. Deposition of highly photoconductive wide band gap a-SiO:H thin films at a high temperature without H-dilution;Solar Energy Materials and Solar Cells;2005-10-14

3. On the Heavy Fermion Road;Progress in Low Temperature Physics;2005

4. The roles of deposition pressure and rf power in opto-electronic properties of a-SiO:H films;Journal of Physics D: Applied Physics;1998-07-21

5. Ground state in CeAl3: a Ce(Al1−xMx)3 study with MGa, Si, Ge and Sn;Journal of Alloys and Compounds;1997-08

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