Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Maintaining atomically smooth GaAs surfaces after high-temperature processing for precise interdiffusion analysis and materials engineering;Journal of Vacuum Science & Technology B;2021-12
2. Point Defects and Diffusion in Semiconductors;Handbook of Solid State Diffusion, Volume 1;2017
3. Point Defects, Diffusion, and Precipitation;Materials Science and Technology;2013-02-15
4. Compound Semiconductors: Diffusion;Encyclopedia of Materials: Science and Technology;2001
5. Point defects and diffusion in thin films of GaAs;Materials Science and Engineering: R: Reports;1997-10
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