Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-SiC-Reference-Cited by-同舟云学术

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Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-SiC

Published:1987-05-20 Issue:Part 2, No. 5 Volume:26 Page:L533-L535
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamanaka Mitsugu,Daimon Hiroshi,Sakuma Eiichiro,Misawa Shunji,Endo Kazuhiro,Yoshida Sadafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0);Applied Surface Science;2015-10

2. Temperature Stability of Heteropolytypic 6H/3C FETs;Materials Science Forum;2007-09

3. Observation of a two dimensional electron gas formed in a polarization doped C-face 3C∕4H SiC heteropolytype junction;Applied Physics Letters;2007-07-16

4. Optimisation of Heterostructure Bipolar Transistors in SiC;Materials Science Forum;2005-05

5. Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition;Journal of Applied Physics;2004-06-15

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