Observation of a two dimensional electron gas formed in a polarization doped C-face 3C∕4H SiC heteropolytype junction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2754650
Reference26 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Fabrication and characterization of field-plated buried-gate SiC MESFETs
3. Reliability and performance limitations in SiC power devices
4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
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3. High-mobility 2D electron gas in carbon-face 3C-SiC/4H-SiC heterostructure with single-domain 3C-SiC layer;Applied Physics Letters;2022-05-23
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