Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers-Reference-Cited by-同舟云学术

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Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers

Published:1987-02-20 Issue:Part 1, No. 2 Volume:26 Page:252-255
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Soga Tetsuo,Sakai Shiro,Umeno Masayoshi,Hattori Shuzo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays;Surface Science Reports;2013-11

2. Defect reduction of GaAs/Si epitaxy by aspect ratio trapping;Journal of Applied Physics;2008-05-15

3. High-κ dielectrics and advanced channel concepts for Si MOSFET;Journal of Materials Science: Materials in Electronics;2008-05-02

4. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping;Applied Physics Letters;2007-07-09

5. Two-step Defect Reduction of GaAs/Si Epitaxy by Selective Aspect Ratio Trapping;MRS Proceedings;2007

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