Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=11/a=115601/pdf
Reference17 articles.
1. Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters
2. Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon
3. Segregation of Oxygen at a Solid/Liquid Interface in Silicon
4. Secondary phase inclusions in polycrystalline sheet silicon
5. On-wafer investigation of SiC and Si3N4 inclusions in multicrystalline Si grown by directional solidification
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1. Growth of Si multicrystalline ingots using the conventional cast method;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020
2. Nitrogen Impurity in Crystalline Silicon;Handbook of Photovoltaic Silicon;2019
3. Nitrogen Impurity in Crystalline Silicon;Handbook of Photovoltaic Silicon;2019
4. Distribution of light-element impurities in Si crystals grown by seed-casting method;Japanese Journal of Applied Physics;2018-07-20
5. Electrically active light-element complexes in silicon crystals grown by cast method;Japanese Journal of Applied Physics;2016-08-01
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