Distribution of light-element impurities in Si crystals grown by seed-casting method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=8S3/a=08RB19/pdf
Reference34 articles.
1. Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth
2. Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells
3. Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon
4. Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers
5. Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: Towards high efficiency and low cost silicon solar cells
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies;Solar RRL;2020-02-25
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