Epitaxial Growth of Aluminum Films on Hydrogen-Mediated Si(100) Surface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Orientationally ordered ridge structures of aluminum films on hydrogen terminated silicon;Thin Solid Films;2006-12
2. Hydrogen interaction with clean and modified silicon surfaces;Surface Science Reports;1999-10
3. Growth of Mg films on H-terminated Si (111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-09
4. Surfactant effect of atomic hydrogen on suicide-formation of nickel on Si(110) surfaces;Thin Solid Films;1999-04
5. The initial stage of nucleation and growth of Al on H/Si(100)-1×1 by dimethylaluminum hydride vapor deposition;Applied Surface Science;1999-03
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