Visible Photoluminescence in Highly Photoconductive Hydrogenated Amorphous Silicon Deposited by Glow Discharge ofSiH4Highly Diluted with He-Reference-Cited by-同舟云学术

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Visible Photoluminescence in Highly Photoconductive Hydrogenated Amorphous Silicon Deposited by Glow Discharge ofSiH4Highly Diluted with He

Published:1994-10-15 Issue:Part 1, No. 10 Volume:33 Page:5793-5800
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Akiyama Koji,Ogiwara Akifumi,Ogawa Hisahito

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen effect on nanostructural features of nanocrystalline silicon thin films deposited at 200°C by PECVD;Journal of Non-Crystalline Solids;2014-02

2. Origin of photoluminescence in nanocrystalline Si:H films;Journal of Luminescence;2007-10

3. Structural studies on Si:H network by Raman, micro-photoluminescence, electron microscopy and ultraviolet ellipsometry: effect of Ar dilution to the SiH4-plasma;Thin Solid Films;2005-04

4. In situmicro Raman investigation of the laser crystallization in Si thin films plasma enhanced chemical vapor deposition-grown from He-diluted SiH4;Journal of Applied Physics;2004-05-15

5. Crystallization of amorphous hydrogenated silicon films deposited under various conditions;Semiconductors;2002-10

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