The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition-Reference-Cited by-同舟云学术

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The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition

Published:1994-10-15 Issue:Part 1, No. 10 Volume:33 Page:5663-5667
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Osborne Ian S.,Hata Nobuhiro,Ganguly Gautam,Matsuda Akihisa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD;Journal of Physics: Conference Series;2014-06-03

2. Low ion energy RF reactor using an array of plasmas through a grounded grid;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-03

3. Calculations of the chemical composition of helium–silane plasma;Russian Physics Journal;2010-06

4. Characteristics of a mesh-bias-controlled electron cyclotron resonance plasma for the growth of gallium nitride epitaxial films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-01

5. Steady state defect density and annealing kinetics of light-induced defects in a-Si:H deposited from ‘new’ deposition techniques;Journal of Non-Crystalline Solids;1996-05

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