Contribution of ionic precursors to deposition rate of a-Si:H films fabricated by plasma CVD
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/518/i=1/a=012008/pdf
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1. Advanced materials processing for high-efficiency thin-film silicon solar cells
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5. The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
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1. Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H2/Si-H Bond Density Ratio of a-Si:H Films;Plasma and Fusion Research;2019-09-09
2. Identification and Suppression of Si-H2 Bond Formation at P/I Interface in a-Si:H Films Deposited by SiH4 Plasma CVD;Plasma and Fusion Research;2019-09-09
3. Correlation between SiH2/SiH and light-induced degradation of p–i–n hydrogenated amorphous silicon solar cells;Japanese Journal of Applied Physics;2016-06-13
4. Deposition of Germanium Crystalline Nanoparticle Composite Films by Using Reactive Dusty Plasma Process and their Application for Quantum-Dot Solar Cells;Journal of Smart Processing;2015
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