Comparison of GaAs Facet Formation on Patterned Substrate during Molecular Beam Epitaxy and Migration Enhanced Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2;Journal of Crystal Growth;2014-09
4. (Invited) Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications;ECS Transactions;2010-10-01
5. Selective growth of C[sub 60]/GaAs and the optical characteristic;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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