Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics-Reference-Cited by-同舟云学术

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Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics

Published:1994-01-30 Issue:Part 1, No. 1B Volume:33 Page:727-733
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hashizume Tamotsu,Hasegawa Hideki,Riemenschneider Rolf,Hartnagel Hans L.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the interpretation of cathodoluminescence intensity maps of wide band gap nanowires;Nanotechnology;2018-11-13

2. Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors;Journal of Applied Physics;2017-12-14

3. Ion-Beam-Induced Defects in CMOS Technology: Methods of Study;Ion Implantation - Research and Application;2017-06-14

4. Analysis of interface states and series resistances in Au/p-InP structures prepared with photolithography technique;Indian Journal of Physics;2013-05-09

5. Impact of dry-etching induced damage in InP-based photonic crystals;SPIE Proceedings;2008-04-25

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