Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors-Reference-Cited by-同舟云学术

Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Published:2017-12-14 Issue:22 Volume:122 Page:224504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matys M.¹,Kaneki S.¹,Nishiguchi K.¹,Adamowicz B.²,Hashizume T.¹

Affiliation:

1. Research Center for Integrated Quantum Electronics, Hokkaido University, Kita-13 Nishi-8, Kita-ku, 060-8628 Sapporo, Japan

2. Institute of Physics - CSE, Silesian University of Technology, Konarskiego 22B, 44-100 Gliwice, Poland

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000497

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5. Reliability and parasitic issues in GaN-based power HEMTs: a review

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