Concise Analytical Model for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices with Consideration of Energy Transport-Reference-Cited by-同舟云学术

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Concise Analytical Model for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices with Consideration of Energy Transport

Published:1994-01-30 Issue:Part 1, No. 1B Volume:33 Page:550-553
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ma Shyh-Yih,Kuo James B.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An electron temperature model of the nMOSFETs;Modern Physics Letters B;2020-03-05

2. Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET;Solid-State Electronics;2015-01

3. Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs;Solid-State Electronics;2004-06

4. An analytical model for fully depleted single gate SOI MOS transistors including lattice temperature effects;International Journal of Electronics;2000-02

5. Assessment of approximate balance equation transport models used for submicron silicon device modelling;International Journal of Electronics;1999-08

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