Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant-Reference-Cited by-同舟云学术

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Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant

Published:1994-04-30 Issue:Part 1, No. 4B Volume:33 Page:2307-2310
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakamoto Kunihiro,Matsuhata Hirofumi,Kyoya Ken'ichi,Miki Kazushi,Sakamoto Tsunenori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of InAs buffer layer thickness on physical properties of InAsBi heterostructures grown by MOCVD;Journal of Crystal Growth;2020-11

2. Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets;Applied Physics Letters;2016-10-10

3. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation;Applied Physics Letters;2016-05-02

4. Stability and Surface Reconstruction of Topological Insulator Bi2Se3 on Exposure to Atmosphere;The Journal of Physical Chemistry C;2014-08-21

5. Surface Termination of CleavedBi2Se3Investigated by Low Energy Ion Scattering;Physical Review Letters;2013-04-08

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