Investigation of In Situ Process for GaAs/AlGaAs Buried Quantum Wires-Reference-Cited by-同舟云学术

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Investigation of In Situ Process for GaAs/AlGaAs Buried Quantum Wires

Published:1994-12-30 Issue:Part 1, No. 12B Volume:33 Page:7223-7227
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wakaya Fujio,Umeda Kazuhiro,Yanagisawa Junichi,Yuba Yoshihiko,Takaoka Sadao,Murase Kazuo,Gamo Kenji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaAs/GaAs heterostructures grown on a focused-Be-ion-beam written backgate;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07

2. Effects of growth interruption in in situ process for buried quantum structures;Microelectronic Engineering;1998-03

3. Fabrication of buried quantum structures using FIB-MBE total vacuum process;Microelectronic Engineering;1997-02

4. Fabrication of laterally selected Si doped layer in GaAs using a low-energy focused ion beam/molecular beam epitaxy combined system;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11

5. Nonlinear electron-wave directional coupler;Physical Review B;1996-03-15

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