Electrical Characteristic Analysis of Postannealed ZnO Thin-Film Transistors under O$

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Electrical Characteristic Analysis of Postannealed ZnO Thin-Film Transistors under O$_{2}$ Ambient

Published:2012-09-20 Issue: Volume:51 Page:09MF09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jeong Kwang-Seok,Kim Yu-Mi,Yun Ho-Jin,Yang Seung-Dong,Lee Sang-Youl,Kim Young-Su,Lee Hi-Deok,Lee Ga-Won

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependency of Piezoelectric Properties in 0.99Pb(Zr0.53Ti0.47)O3–0.01Bi(Y1 −xFex)O3 Ceramics for Application of Energy-Harvesting Devices;Transactions on Electrical and Electronic Materials;2022-09-16

2. Channel engineering of ZnO-based thin film transistors using Al2O3interlayer grown by atomic layer deposition;Japanese Journal of Applied Physics;2014-07-31

3. Investigation of the Gate Bias Stress Instability in ZnO Thin Film Transistors by Low-Frequency Noise Analysis;Japanese Journal of Applied Physics;2013-04-01

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