Channel engineering of ZnO-based thin film transistors using Al2O3interlayer grown by atomic layer deposition-Reference-Cited by-同舟云学术

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Channel engineering of ZnO-based thin film transistors using Al2O3interlayer grown by atomic layer deposition

Published:2014-07-31 Issue:9 Volume:53 Page:091101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Seong-Hyeon,Jeong Kwang-Seok,Yun Ho-Jin,Yang Seung-Dong,Kim Yu-Mi,Kim Jin-Seop,Ko Young-Uk,An Jin-Un,Lee Hi-Deok,Lee Ga-Won

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=9/a=091101/pdf

Reference38 articles.

1. Transparent Conducting Oxides

2. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

3. A comprehensive review of ZnO materials and devices

4. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

5. Frontier of transparent oxide semiconductors

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1. Effects of solution processable CuI thin films with Al₂O₃-based sandwiched architecture for high-performance p-type transistor applications;Journal of Materials Chemistry C;2024

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