A Wide-Range Tunable Level-Keeper Using Vertical Metal–Oxide–Semiconductor Field-Effect Transistors for Current-Reuse Systems
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
1. Design of Ultra-Low-Voltage RF Frontends With Complementary Current-Reused Architectures
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-frequency level-up shifter based on 0.18 µm vertical metal–oxide–semiconductor field-effect transistors with 70% reduction of overshoot voltage above power supply voltage;Japanese Journal of Applied Physics;2015-03-12
2. A High Output Resistance 1.2-V VDD Current Mirror with Deep Submicron Vertical MOSFETs;IEICE Transactions on Electronics;2014
3. A 3-mW/Gbps 1.8-V Operated Current-Reuse Low-Voltage Differential Signaling Driver Using Vertical Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2013-04-01
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