Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
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2. Detailed analysis of minimum operation voltage of extraordinarily unstable cells in fully depleted silicon-on-buried-oxide six-transistor static random access memory;Japanese Journal of Applied Physics;2015-03-19
3. Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells;Japanese Journal of Applied Physics;2014-01-01
4. Physical understanding of hot carrier injection variability in deeply scaled nMOSFETs;Japanese Journal of Applied Physics;2014-01-01
5. Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal–Oxide–Semiconductor Field Effect Transistors;Japanese Journal of Applied Physics;2013-04-01
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