Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Comparison and distribution of minimum operation voltage in fully depleted silicon-on-thin-buried-oxide and bulk static random access memory cells

Published:2014-01-01 Issue:4S Volume:53 Page:04EC18
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mizutani Tomoko,Yamamoto Yoshiki,Makiyama Hideki,Shinohara Hirofumi,Iwamatsu Toshiaki,Oda Hidekazu,Sugii Nobuyuki,Hiramoto Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference38 articles.

1. Fundamental limitations in microelectronics—I. MOS technology

2. Matching properties of MOS transistors

3. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

4. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

5. Separation of effects of statistical impurity number fluctuations and position distribution on Vth fluctuations in scaled MOSFETs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Estimation of minimum operating voltage in fully depleted SOI SRAM cells using gamma distribution;Japanese Journal of Applied Physics;2021-12-17

2. Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application;Japanese Journal of Applied Physics;2018-03-05

3. Measurement of Static Random Access Memory Power-Up State Using an Addressable Cell Array Test Structure;IEEE Transactions on Semiconductor Manufacturing;2017-08

4. Parallel programmable nonvolatile memory using ordinary static random access memory cells;Japanese Journal of Applied Physics;2017-03-22

5. Correlation between static random access memory power-up state and transistor variation;Japanese Journal of Applied Physics;2017-02-10

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3