AgNO$_{3}$-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method-Reference-Cited by-同舟云学术

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AgNO$_{3}$-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method

Published:2012-11-20 Issue: Volume:51 Page:11PE02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimizu Tomohiro,Yamaguchi Takuya,Inoue Fumihiro,Inada Mitsuru,Shingubara Shoso

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of silicon rich oxide light emitter capacitors using textured substrates by metal assisted chemical etching;Journal of Luminescence;2022-10

2. Effects of the doping level in the production of silicon nanowalls by metal assisted chemical etching;Materials Science in Semiconductor Processing;2020-11

3. General corrosion during metal-assisted etching of n-type silicon using different metal catalysts of silver, gold, and platinum;RSC Advances;2020

4. Effect of additives on preparation of vertical holes in Si substrate using metal-assisted chemical etching;Japanese Journal of Applied Physics;2019-05-16

5. Effect of a metal interlayer under Au catalyst for the preparation of microscale holes in Si substrate by metal-assisted chemical etching;Japanese Journal of Applied Physics;2019-02-01

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