Effect of a metal interlayer under Au catalyst for the preparation of microscale holes in Si substrate by metal-assisted chemical etching-Reference-Cited by-同舟云学术

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Effect of a metal interlayer under Au catalyst for the preparation of microscale holes in Si substrate by metal-assisted chemical etching

Published:2019-02-01 Issue:SA Volume:58 Page:SAAE07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimizu Tomohiro,Niwa Ryosuke,Ito Takeshi,Shingubara Shoso

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Kansai University

Takahashi Industrial and Economic Research Foundation

Kyoto Technoscience center

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SA/a=SAAE07/pdf

Reference30 articles.

1. Through-Silicon Via (TSV)

2. Future system-on-silicon LSI chips

3. Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

4. 3-D Hyperintegration and Packaging Technologies for Micro-Nano Systems

5. Through silicon via: From the CMOS imager sensor wafer level package to the 3D integration

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1. Platinum-Particle-Assisted Etching of Low-, Moderately-, and Highly-Doped p-Type Silicon: Change of Composite Porous Structure;Journal of The Electrochemical Society;2024-06-03

2. Electrochemical Investigation of the Effect of Hydrogen Peroxide Concentration on Platinum-Particle-Assisted Etching of p-Type Silicon in a Hydrofluoric Acid Solution;Journal of The Electrochemical Society;2021-11-01

3. Low cost TSV fabrication technologies using anisotropic Si wet etching and conformal electroless plating of barrier and seed metals;2021 IEEE International Interconnect Technology Conference (IITC);2021-07-06

4. Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching;Advanced Materials;2021-05-19

5. Effect of additives on preparation of vertical holes in Si substrate using metal-assisted chemical etching;Japanese Journal of Applied Physics;2019-05-16

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