InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10$^{\circ}$ off Misoriented GaAs Substrate-Reference-Cited by-同舟云学术

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InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10$^{\circ}$ off Misoriented GaAs Substrate

Published:2012-07-23 Issue: Volume:51 Page:080208
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yu Hung Wei,Chung Chen Chen,Wang Chin Te,Nguyen Hong Quan,Tran Binh Tinh,Lin Kung Liang,Dee Chang Fu,Majlis Burhanuddin Yeop,Chang Edward Yi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Optimization of the InGaP/GaAs Dual-Junction Solar Cell Using SILVACO TCAD;International Journal of Photoenergy;2021-02-18

2. Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers;Superlattices and Microstructures;2018-07

3. Comparative investigation of InGaP/InGaAs/Ge triple-junction solar cells using different Te-doped InGaP layers in tunnel junctions;Journal of the Korean Physical Society;2016-03

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