Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers-Reference-Cited by-同舟云学术

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Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

Published:2018-07 Issue: Volume:119 Page:25-39
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Chee Kuan W.A.,Hu Yuning

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Status and perspectives of thin film photovoltaics;Bosio,2010

2. Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions;Essig;Nat. Energy,2017

3. Design and evaluation of ARC less InGaP/AlGaInP DJ solar cell;Abbasian,2017

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achieving high photovoltaic performance in graphene/AlGaAs/GaAs Schottky junction solar cells by incorporating an InAlGaP hole reflector layer;Optics Communications;2024-08

2. On current technology for light absorber materials used in highly efficient industrial solar cells;Renewable and Sustainable Energy Reviews;2023-03

3. Optimizing efficiency of InGaP/GaAs dual-junction solar cells with double tunnel junction and bottom back surface field layers;Optik;2023-02

4. An Improved Performance and High Efficiency DJ III–V Tandem Solar Cell with the Impact of Quantum Tunneling;Applied Solar Energy;2022-12

5. Improving the efficiency of a GaInP solar cell using an AlGaAs buffer layer by optimizing the thicknesses of the PN junction;Digest Journal of Nanomaterials and Biostructures;2022-11-01

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