Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH$_{4}$+B$_{10}$H$_{14}$ Multi-Hollow Discharge Plasma Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Deposition of Cluster-Free B-doped Hydrogenated Amorphous Silicon Films Using SiH$_{4}$+B$_{10}$H$_{14}$ Multi-Hollow Discharge Plasma Chemical Vapor Deposition

Published:2012-01-20 Issue:1 Volume:51 Page:01AD03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Koga Kazunori,Nakahara Kenta,Kim Yeon-Won,Matsunaga Takeaki,Yamashita Daisuke,Matsuzaki Hidefumi,Uchida Giichiro,Kamataki Kunihiro,Itagaki Naho,Shiratani Masaharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference38 articles.

1. Photovoltaic Technology: The Case for Thin-Film Solar Cells

2. Potential of amorphous silicon for solar cells

3. Advances in plasma-enhanced chemical vapor deposition of silicon films at low temperatures

4. Thin-Film Silicon –Growth Process and Solar Cell Application–

5. Present Status and Future Prospects of Silicon Thin-Film Solar Cells

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1. Epitaxial growth of 3C-SiC film by microwave plasma chemical vapor deposition in H2-CH4-SiH4 mixtures: Optical emission spectroscopy study;Journal of Vacuum Science & Technology A;2021-03

2. Performance dependence of Si quantum dot-sensitized solar cells on counter electrode;Japanese Journal of Applied Physics;2014-01-01

3. Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells;Japanese Journal of Applied Physics;2013-10-01

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