Mechanism of Improved Thermal Stability of Cobalt Silicide Formed on Polysilicon Gate by Nitrogen Implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of cobalt silicide from filter metal vacuum arc deposited films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-06
2. Improvement in Thermal Stability of Chemical Vapor Deposition CoSi2/Polycrystalline Silicon Using TiN and Amorphous Silicon Interlayers;Japanese Journal of Applied Physics;2006-02-08
3. Thermal stability of SiO[sub 2]/CoSi[sub 2]/polysilicon multilayer structures improved by cavity formation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. The influence of Ti and TiN on the thermal stability of CoSi2.;MRS Proceedings;2001
5. Investigation on the Thermal and Electrical Properties of Ti-Si-O Film Formed by the Composite Sputtering Deposition;MRS Proceedings;2001
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