Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors-Reference-Cited by-同舟云学术

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Dry Thermal Oxidation of Polycrystalline and Amorphous Silicon Films for Application to Thin Film Transistors

Published:1998-03-30 Issue:Part 1, No. 3B Volume:37 Page:1076-1081
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Miyasaka Mitsutoshi,Itoh Wataru,Ohshima Hiroyuki,Shimoda Tatsuya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing the univariate effect of structural order on the oxidation of ternary alloys: Amorphous vs. crystalline Cu–Zr–Al alloys;Corrosion Science;2021-05

2. Effect of nanoscale surface topography on the adsorption of globular proteins;Applied Surface Science;2021-01

3. Impacts of density of deposited dielectric films on temperature dependence of interface dipole layer strength in multilayered dielectric capacitors for energy harvesting;Japanese Journal of Applied Physics;2020-05-11

4. Effect of structural order on oxidation kinetics and oxide phase evolution of Al–Zr alloys;Corrosion Science;2020-04

5. Oxygen migration in TiO2-based higher-k gate stacks;Journal of Applied Physics;2010-03

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