High Efficiency-Carrier-Generation for the Oxygen Release Reaction in Indium Tin Oxide-Reference-Cited by-同舟云学术

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High Efficiency-Carrier-Generation for the Oxygen Release Reaction in Indium Tin Oxide

Published:1998-07-15 Issue:Part 2, No. 7B Volume:37 Page:L879-L881
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Omata Takahisa,Fujiwara Hiroyuki,Otsuka Shinya,Yao ,Matsuo ,Ono Naoki,Ikawa Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron Irradiation Effects on the Optical and Electrical Properties of ZnO/Ag/SnO₂ Thin Films;Korean Journal of Metals and Materials;2020-03-05

2. Electrical and Optical Properties of Sb-Doped BaSnO3;Chemistry of Materials;2013-09-17

3. Improved electrical and optical properties of ITO thin films by using electron beam irradiation and their application to UV-LED as highly transparent p-type electrodes;Current Applied Physics;2011-07

4. Equilibrium Dependence of the Conductivity of Pure and Tin-Doped Indium Oxide on Oxygen Partial Pressure and Formation of an Intrinsic Defect Cluster;Journal of the American Ceramic Society;2007-12-07

5. Interstitial Oxygen and Dopant Atoms Arrangement in Tin-Doped Indium Oxide;MATERIALS TRANSACTIONS;2007

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