Interstitial Oxygen and Dopant Atoms Arrangement in Tin-Doped Indium Oxide
Author:
Affiliation:
1. Institute for Materials Research, Tohoku University
2. IMRAM, Tohoku University
Publisher
Japan Institute of Metals
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.jstage.jst.go.jp/article/matertrans/48/4/48_N-MRA2007817/_pdf
Reference16 articles.
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5. 5) G. B. González, T. O. Mason, J. P. Quintana, O. Warschkow, D. E. Ellis, J.-H. Hwang, J. P. Hodges and J. D. Jorgensen: J. Appl. Phys. 96 (2004) 3912–3920.
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