Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma-Reference-Cited by-同舟云学术

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Pattern Etching of Ta X-ray Mask Absorber on SiC Membrane by Inductively Coupled Plasma

Published:1998-07-01 Issue:Part 2, No. 7A Volume:37 Page:L824-L826
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iba Yoshihisa,Kumasaka Fumiaki,Aoyama Hajime,Taguchi Takao,Yamabe Masaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dry etching of TaN∕HfO2 gate-stack structure in BCl3∕Ar∕O2 inductively coupled plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-07

2. Etching characteristics of Ta and TaN using Cl2/Ar inductively coupled plasma;Thin Solid Films;2006-05

3. Dry Etching of TaN/HfO2Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma;Japanese Journal of Applied Physics;2005-07-26

4. Evaporated resist for the fabrication and replication of LEEPL mask;SPIE Proceedings;2004-05-20

5. Fabrication of x-ray masks using evaporated electron sensitive layers for back patterning of membranes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

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