Crystal Structures and Phase Transformation in In2Se3Compound Semiconductor-Reference-Cited by-同舟云学术

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Crystal Structures and Phase Transformation in In2Se3Compound Semiconductor

Published:1998-08-15 Issue:Part 1, No. 8 Volume:37 Page:4264-4271
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ye Jiping,Soeda Sigeo,Nakamura Yoshio,Nittono Osamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 137 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selectable growth and electronic structures of two-dimensional layered InSe and In2Se3 films;Applied Physics Letters;2024-09-09

2. Structural and Electronic Response of Multigap N-Doped In₂Se₃: A Prototypical Material for Broad Spectral Optical Devices;ACS Applied Materials & Interfaces;2024-09-06

3. Two-dimensional epitaxy of SnSe film on In2Se3 induced by intrinsic out-of-plane ferroelectricity;Applied Physics Letters;2024-05-13

4. Phase-controlled growth of indium selenide by metalorganic chemical vapor deposition;Journal of Crystal Growth;2024-04

5. In2se3 Nanoparticles for Use in Self-Powered Photoelectrochemical Photodetectors;2024

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