Measurement of the Activation Energy of Tantalum Silicide Growth on Silicon by Rapid Electron Beam Annealing-Reference-Cited by-同舟云学术

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Measurement of the Activation Energy of Tantalum Silicide Growth on Silicon by Rapid Electron Beam Annealing

Published:1991-08-01 Issue:Part 2, No. 8A Volume:30 Page:L1418-L1421
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mahmood F.,Ahmed H.,Suleman M.,Ahmed M. M.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of crystallographic plane and co-deposited element on the growth of ion-sputter induced Si nano-cone arrays: a mechanism study;Applied Physics A;2015-02-25

2. Growth mechanism of tantalum silicides by interdiffusion;Philosophical Magazine;2012-12

3. Electrical and compositional properties of TaSi2 films;Journal of Electronic Materials;2002-10

4. Diffusion Synthesis of Silicides in Thin-Film Metal—Silicon Structures;Rapid Thermal Processing of Semiconductors;1997

5. Scanning electron beam annealing of sputter-deposited titanium on silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

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