Growth mechanism of tantalum silicides by interdiffusion-Reference-Cited by-同舟云学术

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Growth mechanism of tantalum silicides by interdiffusion

Published:2012-12 Issue:34 Volume:92 Page:4215-4229
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Roy Soumitra,Paul Aloke

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786435.2012.705036

Reference30 articles.

1. Measurement of the Activation Energy of Tantalum Silicide Growth on Silicon by Rapid Electron Beam Annealing

2. Tantalum as a diffusion barrier between copper and silicon

3. Chemical stability of Ta diffusion barrier between Cu and Si

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3. High-Temperature Interdiffusion of Tantalum and Niobium with SiC for Processing Hybrid Metal/CMC Components;Coatings;2022-06-22

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