Superconducting Properties of InN with Low Carrier Density near the Mott Transition

Author:

Inushima Takashi1,K. Maude Duncan2,Lu Hai3,J. Schaff William3,Iizuka Takuya4,Kimura Shin-ichi45,Yamamoto Akio6,Fukui Kazutoshi6

Affiliation:

1. Department of Electronics, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan

2. Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, 38042 Grenoble, CEDEX 9, France

3. Department of ECE, Cornell University, 415 Phillips Hall, Ithaca, NY 14853, U.S.A.

4. School of Physical Sciences, The Graduate University for Advanced Studies, Okazaki, Aichi 444-8585, Japan

5. UVSOR Facility, Institute for Molecular Science, Okazaki, Aichi 444-8585, Japan

6. Department of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

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