Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4974999
Reference25 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Mie Resonances, Infrared Emission, and the Band Gap of InN
3. Erratum: Mie Resonances, Infrared Emission, and the Band Gap of InN [Phys. Rev. Lett.92, 117407 (2004)]
4. Comment on “Mie Resonances, Infrared Emission, and the Band Gap of InN”
5. Physical properties of InN with the band gap energy of 1.1eV
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