New photoelectrical properties of InN: Interband spectra and fast kinetics of positive and negative photoconductivity of InN-Reference-Cited by-同舟云学术

New photoelectrical properties of InN: Interband spectra and fast kinetics of positive and negative photoconductivity of InN

Published:2018-05-21 Issue:19 Volume:123 Page:195701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bushuykin P. A.¹²^ORCID,Andreev B. A.¹²^ORCID,Davydov V. Yu.³,Lobanov D. N.¹²,Kuritsyn D. I.¹²,Yablonskiy A. N.¹²,Averkiev N. S.³,Savchenko G. M.³⁴,Krasilnik Z. F.¹²

Affiliation:

1. Institute for Physics of Microstructures RAS, 7, Academicheskaya Str., Afonino, Nizhny Novgorod Region 603087, Russia

2. Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Ave, Nizny Novgorod, 603950, Russia

3. Ioffe Institute, 26 Polytechnicheskaya, St. Petersburg 194021, Russia

4. St. Petersburg State Electro-technical University “LETI,” 197376, 5 Professora Popova Str., St. Petersburg, Russia

Funder

Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022844

Reference31 articles.

1. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

2. Improvement on epitaxial grown of InN by migration enhanced epitaxy

3. High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

4. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

5. Acceptor states in the photoluminescence spectra ofn−InN

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