Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques-Reference-Cited by-同舟云学术

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Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques

Published:1981-04 Issue:4 Volume:20 Page:L249-L252
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Yutaka,Suzuki Takaya,Tamura Masao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Thin Films by Chemical Vapour Deposition;1990

2. Material and device technologies for advanced, high-performance, and radiation-hardened CMOS circuits;Microelectronic Engineering;1988-08

3. Electrical properties of ion beam recrystallized and laser beam annealed arsenic‐implanted silicon on sapphire;Journal of Applied Physics;1987-07-15

4. Mid-gap electron traps (EL2 family) in GaAs;Microelectronic Engineering;1984-10

5. Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility;Japanese Journal of Applied Physics;1984-06-20

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