Focused Si Ion Implantation in GaAs

Author:

Bamba Yasuo,Miyauchi Eizo,Arimoto Hiroshi,Kuramoto Kazuo,Takamori Akira,Hashimoto Hisao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Micromachined multiple focused-ion-beam devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03

2. Effect of Focused Ion Beam Imaging on the Crystallinity of InAs;Microscopy and Microanalysis;2015-09-18

3. Damage production in semiconductor materials by a focused Ga+ ion beam;Journal of Applied Physics;2000-11-15

4. Nuclear microprobe analysis of implantation damage induced by focused gallium ion beams in GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-09

5. Maskless InP wire formation on planar GaAs substrates;Applied Physics Letters;1994-01-24

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