Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures-Reference-Cited by-同舟云学术

Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures

Published:2007-03-02 Issue:No. 10 Volume:46 Page:L230-L233
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fichtenbaum Nicholas A.,Neufeld Carl J.,Schaake Chris,Wu Yuan,Wong Man Hoi,Grundmann Michael,Keller Stacia,DenBaars Steven P.,Speck James S.,Mishra Umesh K.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference13 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates

3. N-Plasma Assisted Molecular Beam Epitaxy of GaN(000\bar1) Thin Films on 6H-SiC(000\bar1)

4. High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers

5. Epitaxial Lateral Overgrowth of GaN

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