Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions-Reference-Cited by-同舟云学术

Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions

Published:2007-04-24 Issue:4B Volume:46 Page:1841-1847
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shima Akio,Mine Toshiyuki,Torii Kazuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

2. Boron diffusion and penetration in ultrathin oxide with poly-Si gate

3. Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors

4. Boron Profile Narrowing in Laser-Processed Silicon after Rapid Thermal Anneal

5. Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized silicon

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