Capacitorless Dynamic Random Access Memory Cell with Highly Scalable Surrounding Gate Structure-Reference-Cited by-同舟云学术

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Capacitorless Dynamic Random Access Memory Cell with Highly Scalable Surrounding Gate Structure

Published:2007-04-24 Issue:4B Volume:46 Page:2143-2147
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jeong Hoon,Lee Yeun Seung,Kang Sangwoo,Park Il Han,Choi Woo Young,Shin Hyungcheol,Lee Jong Duk,Park Byung-Gook

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference1 articles.

1. Memory design using a one-transistor gain cell on SOI

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator;Semiconductor Science and Technology;2013-02-22

2. High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate;Japanese Journal of Applied Physics;2010-04-20

3. Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain;Japanese Journal of Applied Physics;2010-04-20

4. Quantitative Analysis of Hump Effects of Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2010-04-20

5. Capacitor-less memory-cell fabricated on nanoscale unstrained Si layer on strained SiGe layer-on-insulator;Applied Physics Letters;2010-04-19

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