Improvement of Hafnium Oxide/Silicon Oxide Gate Dielectric Stack Quality by High Pressure D2O Post Deposition Annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
2. Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D/sub 2/O-ALD
3. H-related defect complexes in HfO2: A model for positive fixed charge defects
4. The bonding properties of hydrogenated and fluorinated molecules to zirconium oxide thin films: influence of surface defects and water coadsorption
5. Oxidant transport during steam oxidation of silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Power Reduction in Punch-Through Current-Based Electro-Thermal Annealing in Gate-All-Around FETs;Micromachines;2022-01-13
2. Impact of Dielectrics in SOI FinFET for Lower Power Consumption in Punch-through Current-based Local Thermal Annealing;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2021-06-30
3. Impact of Post-Metal Annealing With Deuterium or Nitrogen for Curing a Gate Dielectric Using Joule Heat Driven by Punch-Through Current;IEEE Electron Device Letters;2021-02
4. Three-Dimensional Nanodot-Type Floating Gate Memory Fabricated by Bio-Layer-by-Layer Method;Applied Physics Express;2011-08-01
5. Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels;Microelectronic Engineering;2011-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3