H-related defect complexes in HfO2: A model for positive fixed charge defects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1738946
Reference17 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. Variation in the fixed charge density of SiO[sub x]/ZrO[sub 2] gate dielectric stacks during postdeposition oxidation
3. Influence of annealing condition on the properties of sputtered hafnium oxide
4. Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO2-SiO2) prepared by in situ RTCVD process for system-on-chip applications
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