Reconfigurable Logic Gates Using Single-Electron Spin Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
2. Novel Reconfigurable Logic Gates Using Spin Metal–Oxide–Semiconductor Field-Effect Transistors
3. Single-electron transistors: Electrostatic analogs of the DC SQUIDS
4. Coulomb Blockade Anisotropic Magnetoresistance Effect in a(Ga,Mn)AsSingle-Electron Transistor
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