Advanced Air Gap Process for Multi-Level-Cell Flash Memories Reducing Threshold Voltage Interference and Realizing High Reliability-Reference-Cited by-同舟云学术

Advanced Air Gap Process for Multi-Level-Cell Flash Memories Reducing Threshold Voltage Interference and Realizing High Reliability

Published:2007-04-24 Issue:4B Volume:46 Page:2184-2187
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsukamoto Keisuke,Murata Tatsunori,Fukumura Tatsuya,Ohta Fumihito,Yoshitake Takayuki,Shimizu Satoshi,Ikeda Yoshihiro,Asai Koyu,Shimizu Masahiro,Tsuchiya Osamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference1 articles.

1. Hydrogen Ion Drift into Underlying Oxides by RF Bias during High-Density Plasma Chemical Vapor Deposition

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